- 您现在的位置：买卖IC网 > Sheet目录444 > IRF7413QTRPBF (International Rectifier)MOSFET N-CH 30V 13A 8-SOIC
IRF7413QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
R G
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
30
–––
–––
–––
1.0
10
–––
–––
–––
–––
–––
–––
–––
1.2
–––
–––
–––
–––
–––
–––
–––
Typ
–––
0.034
–––
–––
–––
–––
–––
–––
–––
–––
52
6.1
16
–––
8.6
50
52
46
1800
680
240
Max
–––
–––
0.011
0.018
3.0
–––
12
25
-100
100
79
9.2
23
3.7
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
?
V
S
μA
nA
nC
ns
pF
Conditions
V GS = 0V, I D = 250μA
Reference to 25°C, I D = 1mA
V GS = 10V, I D = 7.3A
V GS = 4.5V, I D = 3.7A
V DS = V GS , I D = 250μA
V DS = 10V, I D = 3.7A
V DS = 30V, V GS = 0V
V DS = 24V, V GS = 0V, T J = 125°C
V GS = -20V
V GS = 20V
I D = 7.3A
V DS = 24V
V GS = 10V, See Fig. 6 and 9
V DD = 15V
I D = 7.3A
R G = 6.2 ?
R G = 2.0 ?, See Fig. 10
V GS = 0V
V DS = 25V
? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
I S
I SM
V SD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
74
200
Max.
3.1
58
1.0
110
300
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 7.3A, V GS = 0V
T J = 25°C, I F = 7.3A
di/dt = 100A/μs
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L =9.8mH
R G = 25 ? , I AS =7.3A. (See Figure 12)
www.irf.com
? I SD ≤ 7.3A, di/dt ≤ 100A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board
? R θ is measured at T J approximately 90°C
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRF7416QTRPBF
MOSFET P-CH 30V 10A 8-SOIC
IRF7421D1TR
MOSFET N-CH 30V 5.8A 8-SOIC
IRF7422D2TR
MOSFET P-CH 20V 4.3A 8-SOIC
IRF7452QTRPBF
MOSFET N-CH 100V 4.5A 8-SOIC
IRF7452TR
MOSFET N-CH 100V 4.5A 8-SOIC
IRF7457TR
MOSFET N-CH 20V 15A 8-SOIC
IRF7459TRPBF
MOSFET N-CH 20V 12A 8-SOIC
IRF7459TR
MOSFET N-CH 20V 12A 8-SOIC
相关代理商/技术参数
IRF7413TR
制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
IRF7413TRPBF
功能描述:MOSFET MOSFT 30V 13A 11mOhm 44nC
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7413TRPBF-CUT TAPE
制造商:IR 功能描述:Single N-Channel 30 V 2.5 W 52 nC Hexfet Power Mosfet Surface Mount - SOIC-8
IRF7413Z
功能描述:MOSFET N-CH 30V 13A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF7413ZGTRPBF
功能描述:MOSFET MOSFT 30V 13A 10mOhm 9.5nC
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7413ZHR
制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13A 8-Pin SOIC
IRF7413ZPBF
功能描述:MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7413ZTR
功能描述:MOSFET N-CH 30V 13A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件